FPF2C110BI07AS2

onsemi

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Part No. FPF2C110BI07AS2
Manufacturer onsemi
Description Power Integrated Module (PIM), F2, SiC Diode + MOSFET + IGBT, 650 V
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In stock 685 pcs
Reference Price
(In US Dollars)
10 pcs100 pcs1000 pcs10000 pcs
$81.643$73.695$66.47$65.025
Submit a Request For Quotation on quantities greater than those displayed.
Target Price:(USD)
Quantity:
Total:
$81.643

Specifications

Data sheet

Voltage - Collector Emitter Breakdown (Max):650V
Vce(on) (Max) @ Vge, Ic:2.3V @ 15V, 40A
Supplier Device Package:F2
Series:-
Power - Max:300W
Package / Case:30-DIP Module
Operating Temperature:-40°C ~ 150°C
NTC Thermistor:Yes
Mounting Type:Through Hole
Moisture Sensitivity Level (MSL):1 (Unlimited)
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Input:Standard
IGBT Type:-
Detailed Description:IGBT Module Half Bridge 650V 40A 300W Through Hole F2
Current - Collector Cutoff (Max):250µA
Current - Collector (Ic) (Max):40A
Configuration:Half Bridge
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