FGA30T65SHD

onsemi

FGA30T65SHD
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Part No. FGA30T65SHD
Manufacturer onsemi
Description Trans IGBT Chip N-CH 650V 60A 238000mW 3-Pin(3+Tab) TO-3PN Tube
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In stock 15770 pcs
Reference Price
(In US Dollars)
10 pcs100 pcs1000 pcs10000 pcs
$2.799$2.527$2.279$2.23
Submit a Request For Quotation on quantities greater than those displayed.
Target Price:(USD)
Quantity:
Total:
$2.799

Specifications

Data sheet

Voltage - Collector Emitter Breakdown (Max):650V
Vce(on) (Max) @ Vge, Ic:2.1V @ 15V, 30A
Test Condition:400V, 30A, 6 Ohm, 15V
Td (on/off) @ 25°C:14.4ns/52.8ns
Switching Energy:598µJ (on), 167µJ (off)
Supplier Device Package:TO-3PN
Series:-
Reverse Recovery Time (trr):31.8ns
Power - Max:238W
Packaging:Tube
Package / Case:TO-3P-3, SC-65-3
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Moisture Sensitivity Level (MSL):1 (Unlimited)
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Input Type:Standard
IGBT Type:Trench Field Stop
Gate Charge:54.7nC
Detailed Description:IGBT Trench Field Stop 650V 60A 238W Through Hole TO-3PN
Current - Collector Pulsed (Icm):90A
Current - Collector (Ic) (Max):60A
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