FDP8D5N10C

AMI Semiconductor / ON Semiconductor

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Part No. FDP8D5N10C
Manufacturer AMI Semiconductor / ON Semiconductor
Description FET ENGR DEV-NOT REL
Lead Free Status / RoHS Status
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Reference Price
(In US Dollars)
800 pcs
$2.698
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Total:
$2.698

Specifications

Data sheet

Vgs(th) (Max) @ Id:4V @ 130µA
Vgs (Max):±20V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:TO-220-3
Series:PowerTrench®
Rds On (Max) @ Id, Vgs:8.5 mOhm @ 76A, 10V
Power Dissipation (Max):2.4W (Ta), 107W (Tc)
Package / Case:TO-220-3
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Manufacturer Standard Lead Time:32 Weeks
Lead Free Status:Lead free
Input Capacitance (Ciss) (Max) @ Vds:2475pF @ 50V
Gate Charge (Qg) (Max) @ Vgs:34nC @ 10V
FET Type:N-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):10V
Drain to Source Voltage (Vdss):100V
Detailed Description:N-Channel 100V 76A (Tc) 2.4W (Ta), 107W (Tc) Through Hole TO-220-3
Current - Continuous Drain (Id) @ 25°C:76A (Tc)
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