EPC8009ENGR

EPC

EPC8009ENGR
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Part No. EPC8009ENGR
Manufacturer EPC
Description TRANS GAN 65V 4.1A BUMPED DIE
Lead Free Status / RoHS Status Lead free / RoHS Compliant
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Specifications

Data sheet

Voltage - Test:47pF @ 32.5V
Voltage - Breakdown:Die
Vgs(th) (Max) @ Id:138 mOhm @ 500mA, 5V
Technology:GaNFET (Gallium Nitride)
Series:eGaN®
RoHS Status:Tray
Rds On (Max) @ Id, Vgs:4.1A (Ta)
Polarization:Die
Other Names:917-EPC8009ENGR
EPC8009ENGG
Operating Temperature:-40°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Moisture Sensitivity Level (MSL):1 (Unlimited)
Manufacturer Part Number:EPC8009ENGR
Input Capacitance (Ciss) (Max) @ Vds:0.38nC @ 5V
Gate Charge (Qg) (Max) @ Vgs:2.5V @ 250µA
FET Feature:N-Channel
Expanded Description:N-Channel 65V 4.1A (Ta) Surface Mount Die
Drain to Source Voltage (Vdss):-
Description:TRANS GAN 65V 4.1A BUMPED DIE
Current - Continuous Drain (Id) @ 25°C:65V
Capacitance Ratio:-
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