EPC2110ENGRT

EPC

EPC2110ENGRT
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Part No. EPC2110ENGRT
Manufacturer EPC
Description TRANS GAN 2N-CH 120V BUMPED DIE
Lead Free Status / RoHS Status Lead free / RoHS Compliant
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Reference Price
(In US Dollars)
2500 pcs
$1.133
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Target Price:(USD)
Quantity:
Total:
$1.133

Specifications

Data sheet

Vgs(th) (Max) @ Id:2.5V @ 700µA
Supplier Device Package:Die
Series:eGaN®
Rds On (Max) @ Id, Vgs:60 mOhm @ 4A, 5V
Power - Max:-
Packaging:Tape & Reel (TR)
Package / Case:Die
Other Names:917-EPC2110ENGRTR
EPC2110ENGR
Operating Temperature:-40°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Moisture Sensitivity Level (MSL):1 (Unlimited)
Manufacturer Standard Lead Time:16 Weeks
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds:80pF @ 60V
Gate Charge (Qg) (Max) @ Vgs:0.8nC @ 5V
FET Type:2 N-Channel (Dual) Common Source
FET Feature:GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss):120V
Detailed Description:Mosfet Array 2 N-Channel (Dual) Common Source 120V 3.4A Surface Mount Die
Current - Continuous Drain (Id) @ 25°C:3.4A
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