TPW4R008NH,L1Q

Toshiba Semiconductor and Storage

TPW4R008NH,L1Q
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Part No. TPW4R008NH,L1Q
Manufacturer Toshiba Semiconductor and Storage
Description MOSFET N-CH 80V 116A 8DSOP
Lead Free Status / RoHS Status Lead free / RoHS Compliant
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Reference Price
(In US Dollars)
5000 pcs
$0.875
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Target Price:(USD)
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Total:
$0.875

Specifications

Data sheet

Vgs(th) (Max) @ Id:4V @ 1mA
Vgs (Max):±20V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:8-DSOP Advance
Series:U-MOSVIII-H
Rds On (Max) @ Id, Vgs:4 mOhm @ 50A, 10V
Power Dissipation (Max):800mW (Ta), 142W (Tc)
Packaging:Tape & Reel (TR)
Package / Case:8-PowerVDFN
Other Names:TPW4R008NH,L1Q(M
TPW4R008NHL1QTR
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Moisture Sensitivity Level (MSL):1 (Unlimited)
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds:5300pF @ 40V
Gate Charge (Qg) (Max) @ Vgs:59nC @ 10V
FET Type:N-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):10V
Drain to Source Voltage (Vdss):80V
Detailed Description:N-Channel 80V 116A (Tc) 800mW (Ta), 142W (Tc) Surface Mount 8-DSOP Advance
Current - Continuous Drain (Id) @ 25°C:116A (Tc)
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