TPS1100DR

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Part No. TPS1100DR
Manufacturer N/A
Description Single P-channel Enhancement-Mode MOSFET 8-SOIC
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In stock 39876 pcs
Reference Price
(In US Dollars)
10 pcs100 pcs1000 pcs10000 pcs
$0.792$0.715$0.645$0.631
Submit a Request For Quotation on quantities greater than those displayed.
Target Price:(USD)
Quantity:
Total:
$0.792

Specifications

Data sheet

Vgs(th) (Max) @ Id:1.5V @ 250µA
Vgs (Max):+2V, -15V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:8-SOIC
Series:-
Rds On (Max) @ Id, Vgs:180 mOhm @ 1.5A, 10V
Power Dissipation (Max):791mW (Ta)
Packaging:Tape & Reel (TR)
Package / Case:8-SOIC (0.154", 3.90mm Width)
Other Names:TPS1100DRG4
TPS1100DRG4-ND
Operating Temperature:-40°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Moisture Sensitivity Level (MSL):1 (Unlimited)
Manufacturer Standard Lead Time:22 Weeks
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Gate Charge (Qg) (Max) @ Vgs:5.45nC @ 10V
FET Type:P-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):2.7V, 10V
Drain to Source Voltage (Vdss):15V
Detailed Description:P-Channel 15V 1.6A (Ta) 791mW (Ta) Surface Mount 8-SOIC
Current - Continuous Drain (Id) @ 25°C:1.6A (Ta)
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