TPN2R805PL,L1Q

Toshiba Semiconductor and Storage

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Part No. TPN2R805PL,L1Q
Manufacturer Toshiba Semiconductor and Storage
Description X35 PB-F POWER MOSFET TRANSISTOR
Lead Free Status / RoHS Status Lead free / RoHS Compliant
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Reference Price
(In US Dollars)
5000 pcs
$0.441
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Total:
$0.441

Specifications

Data sheet

Vgs(th) (Max) @ Id:2.4V @ 300µA
Vgs (Max):±20V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:8-TSON Advance (3.3x3.3)
Series:U-MOSIX-H
Rds On (Max) @ Id, Vgs:2.8 mOhm @ 40A, 10V
Power Dissipation (Max):2.67W (Ta), 104W (Tc)
Package / Case:8-PowerVDFN
Other Names:TPN2R805PLL1Q
Operating Temperature:175°C
Mounting Type:Surface Mount
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds:3.2nF @ 22.5V
Gate Charge (Qg) (Max) @ Vgs:39nC @ 10V
FET Type:N-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Drain to Source Voltage (Vdss):45V
Detailed Description:N-Channel 45V 139A (Ta), 80A (Tc) 2.67W (Ta), 104W (Tc) Surface Mount 8-TSON Advance (3.3x3.3)
Current - Continuous Drain (Id) @ 25°C:139A (Ta), 80A (Tc)
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