TP65H035WS

Transphorm

TP65H035WS
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Part No. TP65H035WS
Manufacturer Transphorm
Description 650 V 46.5 CASCODE GAN FET
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In stock 111 pcs
Reference Price
(In US Dollars)
1 pcs10 pcs30 pcs120 pcs270 pcs
$24.29$22.08$20.424$18.768$17.112
Submit a Request For Quotation on quantities greater than those displayed.
Target Price:(USD)
Quantity:
Total:
$24.29

Specifications

Data sheet

Vgs(th) (Max) @ Id:4.8V @ 700µA
Vgs (Max):±20V
Technology:GaNFET (Gallium Nitride)
Supplier Device Package:TO-247-3
Series:-
Rds On (Max) @ Id, Vgs:41 mOhm @ 30A, 8V
Power Dissipation (Max):156W (Tc)
Package / Case:TO-247-3
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Moisture Sensitivity Level (MSL):3 (168 Hours)
Manufacturer Standard Lead Time:15 Weeks
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds:1500pF @ 400V
Gate Charge (Qg) (Max) @ Vgs:36nC @ 8V
FET Type:N-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):8V
Drain to Source Voltage (Vdss):650V
Detailed Description:N-Channel 650V 46.5A (Tc) 156W (Tc) Through Hole TO-247-3
Current - Continuous Drain (Id) @ 25°C:46.5A (Tc)
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