TK9P65W,RQ

Toshiba Semiconductor and Storage

TK9P65W,RQ
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Part No. TK9P65W,RQ
Manufacturer Toshiba Semiconductor and Storage
Description MOSFET N-CH 650V 9.3A DPAK
Lead Free Status / RoHS Status Lead free / RoHS Compliant
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Reference Price
(In US Dollars)
2000 pcs
$0.873
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Total:
$0.873

Specifications

Data sheet

Vgs(th) (Max) @ Id:3.5V @ 350µA
Vgs (Max):±30V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:DPAK
Series:DTMOSIV
Rds On (Max) @ Id, Vgs:560 mOhm @ 4.6A, 10V
Power Dissipation (Max):80W (Tc)
Packaging:Tape & Reel (TR)
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
Other Names:TK9P65W,RQ(S
TK9P65WRQTR
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Moisture Sensitivity Level (MSL):1 (Unlimited)
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds:700pF @ 300V
Gate Charge (Qg) (Max) @ Vgs:20nC @ 10V
FET Type:N-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):10V
Drain to Source Voltage (Vdss):650V
Detailed Description:N-Channel 650V 9.3A (Ta) 80W (Tc) Surface Mount DPAK
Current - Continuous Drain (Id) @ 25°C:9.3A (Ta)
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