TK8Q65W,S1Q

Toshiba Semiconductor and Storage

TK8Q65W,S1Q
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Part No. TK8Q65W,S1Q
Manufacturer Toshiba Semiconductor and Storage
Description MOSFET N-CH 650V 7.8A IPAK
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In stock 4400 pcs
Reference Price
(In US Dollars)
1 pcs75 pcs150 pcs525 pcs1050 pcs
$1.80$1.449$1.304$1.014$0.84
Submit a Request For Quotation on quantities greater than those displayed.
Target Price:(USD)
Quantity:
Total:
$1.80

Specifications

Data sheet

Vgs(th) (Max) @ Id:3.5V @ 300µA
Vgs (Max):±30V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:I-PAK
Series:DTMOSIV
Rds On (Max) @ Id, Vgs:670 mOhm @ 3.9A, 10V
Power Dissipation (Max):80W (Tc)
Packaging:Tube
Package / Case:TO-251-3 Stub Leads, IPak
Other Names:TK8Q65W,S1Q(S
TK8Q65WS1Q
Operating Temperature:150°C (TJ)
Mounting Type:Through Hole
Moisture Sensitivity Level (MSL):1 (Unlimited)
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds:570pF @ 300V
Gate Charge (Qg) (Max) @ Vgs:16nC @ 10V
FET Type:N-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):10V
Drain to Source Voltage (Vdss):650V
Detailed Description:N-Channel 650V 7.8A (Ta) 80W (Tc) Through Hole I-PAK
Current - Continuous Drain (Id) @ 25°C:7.8A (Ta)
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