TK7E80W,S1X

Toshiba Semiconductor and Storage

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Part No. TK7E80W,S1X
Manufacturer Toshiba Semiconductor and Storage
Description MOSFET N-CH 800V 6.5A TO220
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In stock 295 pcs
Reference Price
(In US Dollars)
1 pcs50 pcs100 pcs500 pcs1000 pcs
$3.32$2.674$2.406$1.872$1.551
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Target Price:(USD)
Quantity:
Total:
$3.32

Specifications

Data sheet

Vgs(th) (Max) @ Id:4V @ 280µA
Vgs (Max):±20V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:TO-220
Series:DTMOSIV
Rds On (Max) @ Id, Vgs:950 mOhm @ 3.3A, 10V
Power Dissipation (Max):110W (Tc)
Packaging:Tube
Package / Case:TO-220-3
Other Names:TK7E80W,S1X(S
TK7E80WS1X
Operating Temperature:150°C
Mounting Type:Through Hole
Moisture Sensitivity Level (MSL):1 (Unlimited)
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds:700pF @ 300V
Gate Charge (Qg) (Max) @ Vgs:13nC @ 10V
FET Type:N-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):10V
Drain to Source Voltage (Vdss):800V
Detailed Description:N-Channel 800V 6.5A (Ta) 110W (Tc) Through Hole TO-220
Current - Continuous Drain (Id) @ 25°C:6.5A (Ta)
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