TK31V60W5,LVQ

Toshiba Semiconductor and Storage

TK31V60W5,LVQ
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Part No. TK31V60W5,LVQ
Manufacturer Toshiba Semiconductor and Storage
Description MOSFET N -CH 600V 30.8A DFN
Lead Free Status / RoHS Status Lead free / RoHS Compliant
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Reference Price
(In US Dollars)
2500 pcs
$2.149
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Total:
$2.149

Specifications

Data sheet

Vgs(th) (Max) @ Id:4.5V @ 1.5mA
Vgs (Max):±30V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:4-DFN-EP (8x8)
Series:DTMOSIV
Rds On (Max) @ Id, Vgs:109 mOhm @ 15.4A, 10V
Power Dissipation (Max):240W (Tc)
Packaging:Tape & Reel (TR)
Package / Case:4-VSFN Exposed Pad
Other Names:TK31V60W5,LVQ(S
TK31V60W5LVQTR
Operating Temperature:150°C (TA)
Mounting Type:Surface Mount
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds:3000pF @ 300V
Gate Charge (Qg) (Max) @ Vgs:105nC @ 10V
FET Type:N-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):10V
Drain to Source Voltage (Vdss):600V
Detailed Description:N-Channel 600V 30.8A (Ta) 240W (Tc) Surface Mount 4-DFN-EP (8x8)
Current - Continuous Drain (Id) @ 25°C:30.8A (Ta)
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