THGBMHG8C4LBAWR

Toshiba Semiconductor and Storage

THGBMHG8C4LBAWR
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Part No. THGBMHG8C4LBAWR
Manufacturer Toshiba
Description 32GB Nand 15NM Emmc (EEPROM) (-40DEGC to +85DEGC)
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In stock 1400 pcs
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Specifications

Data sheet

Write Cycle Time - Word, Page:-
Voltage - Supply:2.7 V ~ 3.6 V
Technology:FLASH - NAND
Supplier Device Package:153-WFBGA (11.5x13)
Series:e•MMC™
Packaging:Tray
Package / Case:153-WFBGA
Operating Temperature:-40°C ~ 85°C (TA)
Mounting Type:Surface Mount
Moisture Sensitivity Level (MSL):3 (168 Hours)
Memory Type:Non-Volatile
Memory Size:256Gb (32G x 8)
Memory Interface:MMC
Memory Format:FLASH
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Detailed Description:FLASH - NAND Memory IC 256Gb (32G x 8) MMC 52MHz 153-WFBGA (11.5x13)
Clock Frequency:52MHz
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