STGWT40H65DFB

STMicroelectronics

STGWT40H65DFB
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Part No. STGWT40H65DFB
Manufacturer STMicroelectronics
Description Trans IGBT Chip N-CH 650V 80A 283000mW 3-Pin(3+Tab) TO-3P Tube
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In stock 12861 pcs
Reference Price
(In US Dollars)
10 pcs100 pcs1000 pcs10000 pcs
$3.574$3.226$2.91$2.846
Submit a Request For Quotation on quantities greater than those displayed.
Target Price:(USD)
Quantity:
Total:
$3.574

Specifications

Data sheet

Voltage - Collector Emitter Breakdown (Max):650V
Vce(on) (Max) @ Vge, Ic:2V @ 15V, 40A
Test Condition:400V, 40A, 5 Ohm, 15V
Td (on/off) @ 25°C:40ns/142ns
Switching Energy:498µJ (on), 363µJ (off)
Supplier Device Package:TO-3P
Series:-
Reverse Recovery Time (trr):62ns
Power - Max:283W
Packaging:Tube
Package / Case:TO-3P-3, SC-65-3
Other Names:497-14229-5
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Moisture Sensitivity Level (MSL):1 (Unlimited)
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Input Type:Standard
IGBT Type:Trench Field Stop
Gate Charge:210nC
Detailed Description:IGBT Trench Field Stop 650V 80A 283W Through Hole TO-3P
Current - Collector Pulsed (Icm):160A
Current - Collector (Ic) (Max):80A
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