SSM6H19NU,LF

Toshiba Semiconductor and Storage

SSM6H19NU,LF
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Part No. SSM6H19NU,LF
Manufacturer Toshiba Semiconductor and Storage
Description MOSFET N-CH 40V 2A 6UDFN
Lead Free Status / RoHS Status Lead free / RoHS Compliant
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Reference Price
(In US Dollars)
3000 pcs
$0.116
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Total:
$0.116

Specifications

Data sheet

Vgs(th) (Max) @ Id:1.2V @ 1mA
Vgs (Max):±12V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:6-UDFN (2x2)
Series:U-MOSVII-H
Rds On (Max) @ Id, Vgs:185 mOhm @ 1A, 8V
Power Dissipation (Max):1W (Ta)
Packaging:Tape & Reel (TR)
Package / Case:6-UDFN Exposed Pad
Other Names:SSM6H19NU,LF(B
SSM6H19NU,LF(T
SSM6H19NULFTR
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Moisture Sensitivity Level (MSL):1 (Unlimited)
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds:130pF @ 10V
Gate Charge (Qg) (Max) @ Vgs:2.2nC @ 4.2V
FET Type:N-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):1.8V, 8V
Drain to Source Voltage (Vdss):40V
Detailed Description:N-Channel 40V 2A (Ta) 1W (Ta) Surface Mount 6-UDFN (2x2)
Current - Continuous Drain (Id) @ 25°C:2A (Ta)
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