SSM3J35CT,L3F

Toshiba Semiconductor and Storage

SSM3J35CT,L3F
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Part No. SSM3J35CT,L3F
Manufacturer Toshiba Semiconductor and Storage
Description MOSFET P-CHANNEL 20V 100MA CST3
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In stock 7400 pcs
Reference Price
(In US Dollars)
1 pcs10 pcs100 pcs500 pcs1000 pcs
$0.41$0.37$0.207$0.111$0.076
Submit a Request For Quotation on quantities greater than those displayed.
Target Price:(USD)
Quantity:
Total:
$0.41

Specifications

Data sheet

Vgs(th) (Max) @ Id:1V @ 1mA
Vgs (Max):±10V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:CST3
Series:π-MOSVI
Rds On (Max) @ Id, Vgs:8 Ohm @ 50mA, 4V
Power Dissipation (Max):100mW (Ta)
Packaging:Cut Tape (CT)
Package / Case:SC-101, SOT-883
Other Names:SSM3J35CTL3FCT
Operating Temperature:150°C
Mounting Type:Surface Mount
Moisture Sensitivity Level (MSL):1 (Unlimited)
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds:12.2pF @ 3V
FET Type:P-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):1.2V, 4V
Drain to Source Voltage (Vdss):20V
Detailed Description:P-Channel 20V 100mA (Ta) 100mW (Ta) Surface Mount CST3
Current - Continuous Drain (Id) @ 25°C:100mA (Ta)
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