SSM3J307T(TE85L,F)

Toshiba Semiconductor and Storage

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Part No. SSM3J307T(TE85L,F)
Manufacturer Toshiba Semiconductor and Storage
Description MOSFET P-CH 20V 5A TSM
Lead Free Status / RoHS Status Lead free / RoHS Compliant
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Specifications

Data sheet

Vgs(th) (Max) @ Id:1V @ 1mA
Vgs (Max):±8V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:TSM
Series:U-MOSV
Rds On (Max) @ Id, Vgs:31 mOhm @ 4A, 4.5V
Power Dissipation (Max):700mW (Ta)
Packaging:Original-Reel®
Package / Case:TO-236-3, SC-59, SOT-23-3
Other Names:SSM3J307T(TE85LF)DKR
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Moisture Sensitivity Level (MSL):1 (Unlimited)
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds:1170pF @ 10V
Gate Charge (Qg) (Max) @ Vgs:19nC @ 4.5V
FET Type:P-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):1.5V, 4.5V
Drain to Source Voltage (Vdss):20V
Detailed Description:P-Channel 20V 5A (Ta) 700mW (Ta) Surface Mount TSM
Current - Continuous Drain (Id) @ 25°C:5A (Ta)
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