SISS65DN-T1-GE3

Vishay Precision Group

SISS65DN-T1-GE3
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Part No. SISS65DN-T1-GE3
Manufacturer Vishay
Description Single P-Channel 30 V 4.6 mOhm SMT TrenchFET? Power Mosfet PowerPAK 1212-8S
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In stock 31963 pcs
Reference Price
(In US Dollars)
10 pcs100 pcs1000 pcs10000 pcs
$0.56$0.506$0.456$0.446
Submit a Request For Quotation on quantities greater than those displayed.
Target Price:(USD)
Quantity:
Total:
$0.56

Specifications

Data sheet

Vgs(th) (Max) @ Id:2.3V @ 250µA
Vgs (Max):±20V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:PowerPAK® 1212-8S
Series:TrenchFET® Gen III
Rds On (Max) @ Id, Vgs:4.6 mOhm @ 15A, 10V
Power Dissipation (Max):5.1W (Ta), 65.8W (Tc)
Packaging:Cut Tape (CT)
Package / Case:PowerPAK® 1212-8S
Other Names:SISS65DN-T1-GE3CT
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Moisture Sensitivity Level (MSL):1 (Unlimited)
Manufacturer Standard Lead Time:32 Weeks
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds:4930pF @ 15V
Gate Charge (Qg) (Max) @ Vgs:138nC @ 10V
FET Type:P-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Drain to Source Voltage (Vdss):30V
Detailed Description:P-Channel 30V 25.9A (Ta), 94A (Tc) 5.1W (Ta), 65.8W (Tc) Surface Mount PowerPAK® 1212-8S
Current - Continuous Drain (Id) @ 25°C:25.9A (Ta), 94A (Tc)
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