SISS10DN-T1-GE3

Electro-Films (EFI) / Vishay

SISS10DN-T1-GE3
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Part No. SISS10DN-T1-GE3
Manufacturer Electro-Films (EFI) / Vishay
Description MOSFET N-CH 40V 60A PPAK 1212-8S
Lead Free Status / RoHS Status Lead free / RoHS Compliant
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Reference Price
(In US Dollars)
3000 pcs
$0.472
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Total:
$0.472

Specifications

Data sheet

Vgs(th) (Max) @ Id:2.4V @ 250µA
Vgs (Max):+20V, -16V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:PowerPAK® 1212-8S (3.3x3.3)
Series:TrenchFET®
Rds On (Max) @ Id, Vgs:2.65 mOhm @ 15A, 10V
Power Dissipation (Max):57W (Tc)
Packaging:Tape & Reel (TR)
Package / Case:8-PowerVDFN
Other Names:SISS10DN-T1-GE3TR
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Moisture Sensitivity Level (MSL):1 (Unlimited)
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds:3750pF @ 20V
Gate Charge (Qg) (Max) @ Vgs:75nC @ 10V
FET Type:N-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Drain to Source Voltage (Vdss):40V
Detailed Description:N-Channel 40V 60A (Tc) 57W (Tc) Surface Mount PowerPAK® 1212-8S (3.3x3.3)
Current - Continuous Drain (Id) @ 25°C:60A (Tc)
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