SISC06DN-T1-GE3

Electro-Films (EFI) / Vishay

SISC06DN-T1-GE3
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Part No. SISC06DN-T1-GE3
Manufacturer Electro-Films (EFI) / Vishay
Description MOSFET N-CH 30V
Lead Free Status / RoHS Status Lead free / RoHS Compliant
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Reference Price
(In US Dollars)
3000 pcs
$0.435
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Total:
$0.435

Specifications

Data sheet

Vgs(th) (Max) @ Id:2.1V @ 250µA
Vgs (Max):+20V, -16V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:PowerPAK® 1212-8
Series:TrenchFET® Gen IV
Rds On (Max) @ Id, Vgs:2.7 mOhm @ 15A, 10V
Power Dissipation (Max):3.7W (Ta), 46.3W (Tc)
Packaging:Tape & Reel (TR)
Package / Case:PowerPAK® 1212-8
Other Names:SISC06DN-T1-GE3TR
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Moisture Sensitivity Level (MSL):1 (Unlimited)
Manufacturer Standard Lead Time:32 Weeks
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds:2455pF @ 15V
Gate Charge (Qg) (Max) @ Vgs:58nC @ 10V
FET Type:N-Channel
FET Feature:Schottky Diode (Isolated)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Drain to Source Voltage (Vdss):30V
Detailed Description:N-Channel 30V 27.6A (Ta), 40A (Tc) 3.7W (Ta), 46.3W (Tc) Surface Mount PowerPAK® 1212-8
Current - Continuous Drain (Id) @ 25°C:27.6A (Ta), 40A (Tc)
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