SIS410DN-T1-GE3

Vishay Precision Group

SIS410DN-T1-GE3
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See Product Specifications for product details.
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Part No. SIS410DN-T1-GE3
Manufacturer Vishay
Description Single N-Channel 20 V 0.0048 Ohm 52 W SMT Power Mosfet PowerPAK-1212-8
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In stock 44308 pcs
Reference Price
(In US Dollars)
10 pcs100 pcs1000 pcs10000 pcs
$0.668$0.603$0.544$0.532
Submit a Request For Quotation on quantities greater than those displayed.
Target Price:(USD)
Quantity:
Total:
$0.668

Specifications

Data sheet

Vgs(th) (Max) @ Id:2.5V @ 250µA
Vgs (Max):±20V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:PowerPAK® 1212-8
Series:TrenchFET®
Rds On (Max) @ Id, Vgs:4.8 mOhm @ 20A, 10V
Power Dissipation (Max):3.8W (Ta), 52W (Tc)
Packaging:Tape & Reel (TR)
Package / Case:PowerPAK® 1212-8
Other Names:SIS410DN-T1-GE3-ND
SIS410DN-T1-GE3TR
SIS410DNT1GE3
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Moisture Sensitivity Level (MSL):1 (Unlimited)
Manufacturer Standard Lead Time:27 Weeks
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds:1600pF @ 10V
Gate Charge (Qg) (Max) @ Vgs:41nC @ 10V
FET Type:N-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Drain to Source Voltage (Vdss):20V
Detailed Description:N-Channel 20V 35A (Tc) 3.8W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8
Current - Continuous Drain (Id) @ 25°C:35A (Tc)
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