SIRA10BDP-T1-GE3

Vishay Precision Group

SIRA10BDP-T1-GE3
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Part No. SIRA10BDP-T1-GE3
Manufacturer Vishay
Description N-Channel 30 V 0.0036 Ohm 11.7 nC TrenchFET? Gen IV Mosfet PowerPAK-SO-8
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In stock 49140 pcs
Reference Price
(In US Dollars)
10 pcs100 pcs1000 pcs10000 pcs
$0.425$0.383$0.346$0.338
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Target Price:(USD)
Quantity:
Total:
$0.425

Specifications

Data sheet

Vgs(th) (Max) @ Id:2.4V @ 250µA
Vgs (Max):+20V, -16V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:PowerPAK® SO-8
Series:TrenchFET® Gen IV
Rds On (Max) @ Id, Vgs:3.6 mOhm @ 10A, 10V
Power Dissipation (Max):5W (Ta), 43W (Tc)
Packaging:Tape & Reel (TR)
Package / Case:PowerPAK® SO-8
Other Names:SIRA10BDP-T1-GE3TR
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Moisture Sensitivity Level (MSL):1 (Unlimited)
Manufacturer Standard Lead Time:42 Weeks
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds:1710pF @ 15V
Gate Charge (Qg) (Max) @ Vgs:36.2nC @ 10V
FET Type:N-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Drain to Source Voltage (Vdss):30V
Detailed Description:N-Channel 30V 30A (Ta), 60A (Tc) 5W (Ta), 43W (Tc) Surface Mount PowerPAK® SO-8
Current - Continuous Drain (Id) @ 25°C:30A (Ta), 60A (Tc)
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