SIR892DP-T1-GE3

Vishay Precision Group

SIR892DP-T1-GE3
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Part No. SIR892DP-T1-GE3
Manufacturer Vishay
Description Single N-Channel 25 V 0.0032 Ohms Surface Mount Power Mosfet SOIC-8
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In stock 17299 pcs
Reference Price
(In US Dollars)
10 pcs100 pcs1000 pcs10000 pcs
$1.587$1.432$1.292$1.264
Submit a Request For Quotation on quantities greater than those displayed.
Target Price:(USD)
Quantity:
Total:
$1.587

Specifications

Data sheet

Vgs(th) (Max) @ Id:2.6V @ 250µA
Vgs (Max):±20V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:PowerPAK® SO-8
Series:TrenchFET®
Rds On (Max) @ Id, Vgs:3.2 mOhm @ 10A, 10V
Power Dissipation (Max):5W (Ta), 50W (Tc)
Packaging:Tape & Reel (TR)
Package / Case:PowerPAK® SO-8
Other Names:SIR892DP-T1-GE3TR
SIR892DPT1GE3
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Moisture Sensitivity Level (MSL):1 (Unlimited)
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds:2645pF @ 10V
Gate Charge (Qg) (Max) @ Vgs:60nC @ 10V
FET Type:N-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Drain to Source Voltage (Vdss):25V
Detailed Description:N-Channel 25V 50A (Tc) 5W (Ta), 50W (Tc) Surface Mount PowerPAK® SO-8
Current - Continuous Drain (Id) @ 25°C:50A (Tc)
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