SIR770DP-T1-GE3

Vishay Precision Group

SIR770DP-T1-GE3
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Part No. SIR770DP-T1-GE3
Manufacturer Vishay
Description SiR770DP Series 30 V 0.021 Ohm SMT Dual N-Channel MOSFET PowerPAK SO-8
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In stock 33060 pcs
Reference Price
(In US Dollars)
10 pcs100 pcs1000 pcs10000 pcs
$0.634$0.572$0.516$0.505
Submit a Request For Quotation on quantities greater than those displayed.
Target Price:(USD)
Quantity:
Total:
$0.634

Specifications

Data sheet

Vgs(th) (Max) @ Id:2.8V @ 250µA
Supplier Device Package:PowerPAK® SO-8 Dual
Series:TrenchFET®
Rds On (Max) @ Id, Vgs:21 mOhm @ 8A, 10V
Power - Max:17.8W
Packaging:Cut Tape (CT)
Package / Case:PowerPAK® SO-8 Dual
Other Names:SIR770DP-T1-GE3CT
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Moisture Sensitivity Level (MSL):1 (Unlimited)
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds:900pF @ 15V
Gate Charge (Qg) (Max) @ Vgs:21nC @ 10V
FET Type:2 N-Channel (Dual)
FET Feature:Logic Level Gate
Drain to Source Voltage (Vdss):30V
Detailed Description:Mosfet Array 2 N-Channel (Dual) 30V 8A 17.8W Surface Mount PowerPAK® SO-8 Dual
Current - Continuous Drain (Id) @ 25°C:8A
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