SIHP28N65EF-GE3

Electro-Films (EFI) / Vishay

SIHP28N65EF-GE3
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Part No. SIHP28N65EF-GE3
Manufacturer Electro-Films (EFI) / Vishay
Description MOSFET N-CH 650V 28A TO-220AB
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In stock 330 pcs
Reference Price
(In US Dollars)
1 pcs50 pcs100 pcs500 pcs1000 pcs
$7.47$6.006$5.472$4.431$3.737
Submit a Request For Quotation on quantities greater than those displayed.
Target Price:(USD)
Quantity:
Total:
$7.47

Specifications

Data sheet

Vgs(th) (Max) @ Id:4V @ 250µA
Vgs (Max):±30V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:TO-220AB
Series:-
Rds On (Max) @ Id, Vgs:117 mOhm @ 14A, 10V
Power Dissipation (Max):250W (Tc)
Packaging:Tube
Package / Case:TO-220-3
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Moisture Sensitivity Level (MSL):1 (Unlimited)
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds:3249pF @ 100V
Gate Charge (Qg) (Max) @ Vgs:146nC @ 10V
FET Type:N-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):10V
Drain to Source Voltage (Vdss):650V
Detailed Description:N-Channel 650V 28A (Tc) 250W (Tc) Through Hole TO-220AB
Current - Continuous Drain (Id) @ 25°C:28A (Tc)
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