SIHG30N60E-GE3

Vishay Precision Group

SIHG30N60E-GE3
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Part No. SIHG30N60E-GE3
Manufacturer Vishay
Description MOSFET, N CH, 600V, 29A, TO-247AC-3; Transistor Polarity: N Channel; Continuous D
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In stock 7443 pcs
Reference Price
(In US Dollars)
10 pcs100 pcs1000 pcs10000 pcs
$4.538$4.096$3.694$3.614
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Target Price:(USD)
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Total:
$4.538

Specifications

Data sheet

Vgs(th) (Max) @ Id:4V @ 250µA
Vgs (Max):±30V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:TO-247AC
Series:-
Rds On (Max) @ Id, Vgs:125 mOhm @ 15A, 10V
Power Dissipation (Max):250W (Tc)
Packaging:Tube
Package / Case:TO-247-3
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Moisture Sensitivity Level (MSL):1 (Unlimited)
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds:2600pF @ 100V
Gate Charge (Qg) (Max) @ Vgs:130nC @ 10V
FET Type:N-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):10V
Drain to Source Voltage (Vdss):600V
Detailed Description:N-Channel 600V 29A (Tc) 250W (Tc) Through Hole TO-247AC
Current - Continuous Drain (Id) @ 25°C:29A (Tc)
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