SIHG24N65E-E3

Vishay / Siliconix

SIHG24N65E-E3
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Part No. SIHG24N65E-E3
Manufacturer Vishay Siliconix
Description MOSFET, N CH, 650V, 24A, TO-247AC; Transistor Polarity: N Channel; Continuous Dra
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In stock 12234 pcs
Reference Price
(In US Dollars)
10 pcs100 pcs1000 pcs10000 pcs
$4.023$3.631$3.275$3.204
Submit a Request For Quotation on quantities greater than those displayed.
Target Price:(USD)
Quantity:
Total:
$4.023

Specifications

Data sheet

Vgs(th) (Max) @ Id:4V @ 250µA
Vgs (Max):±30V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:TO-247AC
Series:-
Rds On (Max) @ Id, Vgs:145 mOhm @ 12A, 10V
Power Dissipation (Max):250W (Tc)
Packaging:Tube
Package / Case:TO-247-3
Other Names:SIHG24N65EE3
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Moisture Sensitivity Level (MSL):1 (Unlimited)
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds:2740pF @ 100V
Gate Charge (Qg) (Max) @ Vgs:122nC @ 10V
FET Type:N-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):10V
Drain to Source Voltage (Vdss):650V
Detailed Description:N-Channel 650V 24A (Tc) 250W (Tc) Through Hole TO-247AC
Current - Continuous Drain (Id) @ 25°C:24A (Tc)
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