SIHG21N65EF-GE3

Electro-Films (EFI) / Vishay

SIHG21N65EF-GE3
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Part No. SIHG21N65EF-GE3
Manufacturer Electro-Films (EFI) / Vishay
Description MOSFET N-CH 650V 21A TO-247AC
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In stock 192 pcs
Reference Price
(In US Dollars)
1 pcs25 pcs100 pcs500 pcs1000 pcs
$6.21$4.994$4.55$3.684$3.107
Submit a Request For Quotation on quantities greater than those displayed.
Target Price:(USD)
Quantity:
Total:
$6.21

Specifications

Data sheet

Vgs(th) (Max) @ Id:4V @ 250µA
Vgs (Max):±30V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:TO-247AC
Series:-
Rds On (Max) @ Id, Vgs:180 mOhm @ 11A, 10V
Power Dissipation (Max):208W (Tc)
Packaging:Tube
Package / Case:TO-247-3
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Moisture Sensitivity Level (MSL):1 (Unlimited)
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds:2322pF @ 100V
Gate Charge (Qg) (Max) @ Vgs:106nC @ 10V
FET Type:N-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):10V
Drain to Source Voltage (Vdss):650V
Detailed Description:N-Channel 650V 21A (Tc) 208W (Tc) Through Hole TO-247AC
Current - Continuous Drain (Id) @ 25°C:21A (Tc)
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