SIHB12N50C-E3

Vishay Precision Group

SIHB12N50C-E3
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Part No. SIHB12N50C-E3
Manufacturer Vishay
Description SIHB12N50C-E3 N-channel MOSFET Transistor; 12 A; 500 V; 3-Pin D2PAK
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In stock 11647 pcs
Reference Price
(In US Dollars)
10 pcs100 pcs1000 pcs10000 pcs
$3.542$3.197$2.884$2.821
Submit a Request For Quotation on quantities greater than those displayed.
Target Price:(USD)
Quantity:
Total:
$3.542

Specifications

Data sheet

Vgs(th) (Max) @ Id:5V @ 250µA
Vgs (Max):±30V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:D²PAK (TO-263)
Series:-
Rds On (Max) @ Id, Vgs:555 mOhm @ 4A, 10V
Power Dissipation (Max):208W (Tc)
Packaging:Tape & Reel (TR)
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Moisture Sensitivity Level (MSL):1 (Unlimited)
Manufacturer Standard Lead Time:18 Weeks
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds:1375pF @ 25V
Gate Charge (Qg) (Max) @ Vgs:48nC @ 10V
FET Type:N-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):10V
Drain to Source Voltage (Vdss):500V
Detailed Description:N-Channel 500V 12A (Tc) 208W (Tc) Surface Mount D²PAK (TO-263)
Current - Continuous Drain (Id) @ 25°C:12A (Tc)
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