SIDR668DP-T1-GE3

Vishay Precision Group

SIDR668DP-T1-GE3
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Part No. SIDR668DP-T1-GE3
Manufacturer Vishay
Description Single N-Channel 100 V 4.8 mOhm SMT TrenchFET? Power Mosfet PowerPAK SO-8DC
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In stock 15141 pcs
Reference Price
(In US Dollars)
10 pcs100 pcs1000 pcs10000 pcs
$1.968$1.776$1.602$1.567
Submit a Request For Quotation on quantities greater than those displayed.
Target Price:(USD)
Quantity:
Total:
$1.968

Specifications

Data sheet

Vgs(th) (Max) @ Id:3.4V @ 250µA
Vgs (Max):±20V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:PowerPAK® SO-8DC
Series:TrenchFET® Gen IV
Rds On (Max) @ Id, Vgs:4.8 mOhm @ 20A, 10V
Power Dissipation (Max):6.25W (Ta), 125W (Tc)
Packaging:Tape & Reel (TR)
Package / Case:PowerPAK® SO-8
Other Names:SIDR668DP-T1-GE3TR
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Moisture Sensitivity Level (MSL):1 (Unlimited)
Manufacturer Standard Lead Time:32 Weeks
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds:5400pF @ 50V
Gate Charge (Qg) (Max) @ Vgs:108nC @ 10V
FET Type:N-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):7.5V, 10V
Drain to Source Voltage (Vdss):100V
Detailed Description:N-Channel 100V 23.2A (Ta), 95A (Tc) 6.25W (Ta), 125W (Tc) Surface Mount PowerPAK® SO-8DC
Current - Continuous Drain (Id) @ 25°C:23.2A (Ta), 95A (Tc)
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