SI8812DB-T2-E1

Vishay Precision Group

SI8812DB-T2-E1
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Part No. SI8812DB-T2-E1
Manufacturer Vishay
Description Si8812DB Series 20 V 0.059 Ohm SMT N-Channel MOSFET MICRO FOOT
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In stock 34604 pcs
Reference Price
(In US Dollars)
10 pcs100 pcs1000 pcs10000 pcs
$0.20$0.18$0.163$0.159
Submit a Request For Quotation on quantities greater than those displayed.
Target Price:(USD)
Quantity:
Total:
$0.20

Specifications

Data sheet

Vgs(th) (Max) @ Id:1V @ 250µA
Vgs (Max):±5V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:4-Microfoot
Series:TrenchFET®
Rds On (Max) @ Id, Vgs:59 mOhm @ 1A, 4.5V
Power Dissipation (Max):500mW (Ta)
Packaging:Tape & Reel (TR)
Package / Case:4-UFBGA
Other Names:SI8812DB-T2-E1TR
SI8812DBT2E1
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Moisture Sensitivity Level (MSL):1 (Unlimited)
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Gate Charge (Qg) (Max) @ Vgs:17nC @ 8V
FET Type:N-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):1.2V, 4.5V
Drain to Source Voltage (Vdss):20V
Detailed Description:N-Channel 20V 500mW (Ta) Surface Mount 4-Microfoot
Current - Continuous Drain (Id) @ 25°C:-
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