SI7998DP-T1-GE3
Vishay Precision Group
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See Product Specifications for product details.
Buy SI7998DP-T1-GE3 with confidence from CJJhk.com, 1 Year Warranty
See Product Specifications for product details.
Buy SI7998DP-T1-GE3 with confidence from CJJhk.com, 1 Year Warranty
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| Part No. | SI7998DP-T1-GE3 |
|---|---|
| Manufacturer | Vishay |
| Description | SI7998DP-T1-GE3 Dual N-channel MOSFET Transistor; 15 A; 21 A; 30V; 8-Pin PowerPAK SO |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Reference Price (In US Dollars) | 10 pcs | 100 pcs | 1000 pcs | 10000 pcs | |
|---|---|---|---|---|---|
| $1.014 | $0.915 | $0.826 | $0.808 | ||
Specifications
Data sheet
| Vgs(th) (Max) @ Id: | 2.5V @ 250µA |
|---|---|
| Supplier Device Package: | PowerPAK® SO-8 Dual |
| Series: | TrenchFET® |
| Rds On (Max) @ Id, Vgs: | 9.3 mOhm @ 15A, 10V |
| Power - Max: | 22W, 40W |
| Packaging: | Cut Tape (CT) |
| Package / Case: | PowerPAK® SO-8 Dual |
| Other Names: | SI7998DP-T1-GE3CT |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
| Input Capacitance (Ciss) (Max) @ Vds: | 1100pF @ 15V |
| Gate Charge (Qg) (Max) @ Vgs: | 26nC @ 10V |
| FET Type: | 2 N-Channel (Dual) |
| FET Feature: | Logic Level Gate |
| Drain to Source Voltage (Vdss): | 30V |
| Detailed Description: | Mosfet Array 2 N-Channel (Dual) 30V 25A, 30A 22W, 40W Surface Mount PowerPAK® SO-8 Dual |
| Current - Continuous Drain (Id) @ 25°C: | 25A, 30A |
| Email: | info@cjjhk.com |
Introduce
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