SI7686DP-T1-E3

Vishay Precision Group

SI7686DP-T1-E3
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Part No. SI7686DP-T1-E3
Manufacturer Vishay
Description Single N-Channel 30 V 0.0095 Ohms Surface Mount Power Mosfet PowerPAK SO-8
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In stock 31685 pcs
Reference Price
(In US Dollars)
10 pcs100 pcs1000 pcs10000 pcs
$0.787$0.711$0.641$0.627
Submit a Request For Quotation on quantities greater than those displayed.
Target Price:(USD)
Quantity:
Total:
$0.787

Specifications

Data sheet

Vgs(th) (Max) @ Id:3V @ 250µA
Vgs (Max):±20V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:PowerPAK® SO-8
Series:TrenchFET®
Rds On (Max) @ Id, Vgs:9.5 mOhm @ 13.8A, 10V
Power Dissipation (Max):5W (Ta), 37.9W (Tc)
Packaging:Tape & Reel (TR)
Package / Case:PowerPAK® SO-8
Other Names:SI7686DP-T1-E3TR
SI7686DPT1E3
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Moisture Sensitivity Level (MSL):1 (Unlimited)
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds:1220pF @ 15V
Gate Charge (Qg) (Max) @ Vgs:26nC @ 10V
FET Type:N-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Drain to Source Voltage (Vdss):30V
Detailed Description:N-Channel 30V 35A (Tc) 5W (Ta), 37.9W (Tc) Surface Mount PowerPAK® SO-8
Current - Continuous Drain (Id) @ 25°C:35A (Tc)
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