SI7172DP-T1-GE3

Vishay Precision Group

SI7172DP-T1-GE3
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Part No. SI7172DP-T1-GE3
Manufacturer Vishay
Description Single N-Channel 200 V 0.07 Ohms Surface Mount Power Mosfet PowerPAK SO-8
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In stock 13375 pcs
Reference Price
(In US Dollars)
10 pcs100 pcs1000 pcs10000 pcs
$1.673$1.51$1.362$1.333
Submit a Request For Quotation on quantities greater than those displayed.
Target Price:(USD)
Quantity:
Total:
$1.673

Specifications

Data sheet

Vgs(th) (Max) @ Id:4V @ 250µA
Vgs (Max):±20V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:PowerPAK® SO-8
Series:TrenchFET®
Rds On (Max) @ Id, Vgs:70 mOhm @ 5.9A, 10V
Power Dissipation (Max):5.4W (Ta), 96W (Tc)
Packaging:Cut Tape (CT)
Package / Case:PowerPAK® SO-8
Other Names:SI7172DP-T1-GE3CT
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Moisture Sensitivity Level (MSL):1 (Unlimited)
Manufacturer Standard Lead Time:33 Weeks
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds:2250pF @ 100V
Gate Charge (Qg) (Max) @ Vgs:77nC @ 10V
FET Type:N-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):6V, 10V
Drain to Source Voltage (Vdss):200V
Detailed Description:N-Channel 200V 25A (Tc) 5.4W (Ta), 96W (Tc) Surface Mount PowerPAK® SO-8
Current - Continuous Drain (Id) @ 25°C:25A (Tc)
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