SI5935CDC-T1-GE3

Vishay Precision Group

SI5935CDC-T1-GE3
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Part No. SI5935CDC-T1-GE3
Manufacturer Vishay
Description SI5935CDC-T1-GE3 Dual P-channel MOSFET Transistor; 3.8 A; 20V; 8-Pin 1206 ChipFET
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In stock 35971 pcs
Reference Price
(In US Dollars)
10 pcs100 pcs1000 pcs10000 pcs
$0.391$0.353$0.318$0.311
Submit a Request For Quotation on quantities greater than those displayed.
Target Price:(USD)
Quantity:
Total:
$0.391

Specifications

Data sheet

Vgs(th) (Max) @ Id:1V @ 250µA
Supplier Device Package:1206-8 ChipFET™
Series:TrenchFET®
Rds On (Max) @ Id, Vgs:100 mOhm @ 3.1A, 4.5V
Power - Max:3.1W
Packaging:Tape & Reel (TR)
Package / Case:8-SMD, Flat Lead
Other Names:SI5935CDC-T1-GE3TR
SI5935CDCT1GE3
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Moisture Sensitivity Level (MSL):1 (Unlimited)
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds:455pF @ 10V
Gate Charge (Qg) (Max) @ Vgs:11nC @ 5V
FET Type:2 P-Channel (Dual)
FET Feature:Standard
Drain to Source Voltage (Vdss):20V
Detailed Description:Mosfet Array 2 P-Channel (Dual) 20V 4A 3.1W Surface Mount 1206-8 ChipFET™
Current - Continuous Drain (Id) @ 25°C:4A
Base Part Number:SI5935
Email:info@cjjhk.com

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