SI5906DU-T1-GE3

Vishay Precision Group

SI5906DU-T1-GE3
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Part No. SI5906DU-T1-GE3
Manufacturer Vishay
Description Si5906DU Series Dual N-Channel 30 V 31 mOhm 10.4 W Surface Mount Mosfet
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In stock 10903 pcs
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Specifications

Data sheet

Vgs(th) (Max) @ Id:2.2V @ 250µA
Supplier Device Package:PowerPAK® ChipFet Dual
Series:TrenchFET®
Rds On (Max) @ Id, Vgs:31 mOhm @ 4.8A, 10V
Power - Max:10.4W
Packaging:Tape & Reel (TR)
Package / Case:PowerPAK® ChipFET™ Dual
Other Names:SI5906DU-T1-GE3-ND
SI5906DU-T1-GE3TR
SI5906DUT1GE3
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Moisture Sensitivity Level (MSL):1 (Unlimited)
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds:300pF @ 15V
Gate Charge (Qg) (Max) @ Vgs:8.6nC @ 10V
FET Type:2 N-Channel (Dual)
FET Feature:Logic Level Gate
Drain to Source Voltage (Vdss):30V
Detailed Description:Mosfet Array 2 N-Channel (Dual) 30V 6A 10.4W Surface Mount PowerPAK® ChipFet Dual
Current - Continuous Drain (Id) @ 25°C:6A
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