SI5902BDC-T1-GE3

Vishay Precision Group

SI5902BDC-T1-GE3
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Part No. SI5902BDC-T1-GE3
Manufacturer Vishay
Description MOSFET 2N-CH 30V 4A 1206-8
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In stock 40774 pcs
Reference Price
(In US Dollars)
10 pcs100 pcs1000 pcs10000 pcs
$0.723$0.653$0.589$0.576
Submit a Request For Quotation on quantities greater than those displayed.
Target Price:(USD)
Quantity:
Total:
$0.723

Specifications

Data sheet

Vgs(th) (Max) @ Id:3V @ 250µA
Supplier Device Package:1206-8 ChipFET™
Series:TrenchFET®
Rds On (Max) @ Id, Vgs:65 mOhm @ 3.1A, 10V
Power - Max:3.12W
Packaging:Original-Reel®
Package / Case:8-SMD, Flat Lead
Other Names:SI5902BDC-T1-GE3DKR
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Moisture Sensitivity Level (MSL):1 (Unlimited)
Manufacturer Standard Lead Time:33 Weeks
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds:220pF @ 15V
Gate Charge (Qg) (Max) @ Vgs:7nC @ 10V
FET Type:2 N-Channel (Dual)
FET Feature:Logic Level Gate
Drain to Source Voltage (Vdss):30V
Detailed Description:Mosfet Array 2 N-Channel (Dual) 30V 4A 3.12W Surface Mount 1206-8 ChipFET™
Current - Continuous Drain (Id) @ 25°C:4A
Base Part Number:SI5902
Email:info@cjjhk.com

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