SI5468DC-T1-GE3

Vishay Precision Group

SI5468DC-T1-GE3
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Part No. SI5468DC-T1-GE3
Manufacturer Vishay
Description SI5468DC-T1-GE3 N-channel MOSFET Transistor; 6 A; 30 V; 8-Pin 1206 ChipFET
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In stock 40962 pcs
Reference Price
(In US Dollars)
10 pcs100 pcs1000 pcs10000 pcs
$0.351$0.317$0.286$0.279
Submit a Request For Quotation on quantities greater than those displayed.
Target Price:(USD)
Quantity:
Total:
$0.351

Specifications

Data sheet

Vgs(th) (Max) @ Id:2.5V @ 250µA
Vgs (Max):±20V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:1206-8 ChipFET™
Series:TrenchFET®
Rds On (Max) @ Id, Vgs:28 mOhm @ 6.8A, 10V
Power Dissipation (Max):2.3W (Ta), 5.7W (Tc)
Packaging:Tape & Reel (TR)
Package / Case:8-SMD, Flat Lead
Other Names:SI5468DC-T1-GE3TR
SI5468DCT1GE3
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Moisture Sensitivity Level (MSL):1 (Unlimited)
Manufacturer Standard Lead Time:27 Weeks
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds:435pF @ 15V
Gate Charge (Qg) (Max) @ Vgs:12nC @ 10V
FET Type:N-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Drain to Source Voltage (Vdss):30V
Detailed Description:N-Channel 30V 6A (Tc) 2.3W (Ta), 5.7W (Tc) Surface Mount 1206-8 ChipFET™
Current - Continuous Drain (Id) @ 25°C:6A (Tc)
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