SI4816BDY-T1-GE3

Vishay Precision Group

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Part No. SI4816BDY-T1-GE3
Manufacturer Vishay
Description Transistor MOSFET Array Dual N-CH 30V 5.8A/8.2A 8-Pin SOIC T/R
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In stock 19475 pcs
Reference Price
(In US Dollars)
10 pcs100 pcs1000 pcs10000 pcs
$1.112$1.004$0.906$0.886
Submit a Request For Quotation on quantities greater than those displayed.
Target Price:(USD)
Quantity:
Total:
$1.112

Specifications

Data sheet

Vgs(th) (Max) @ Id:3V @ 250µA
Supplier Device Package:8-SO
Series:LITTLE FOOT®
Rds On (Max) @ Id, Vgs:18.5 mOhm @ 6.8A, 10V
Power - Max:1W, 1.25W
Packaging:Tape & Reel (TR)
Package / Case:8-SOIC (0.154", 3.90mm Width)
Other Names:SI4816BDY-T1-GE3TR
SI4816BDYT1GE3
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Moisture Sensitivity Level (MSL):1 (Unlimited)
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds:-
Gate Charge (Qg) (Max) @ Vgs:10nC @ 5V
FET Type:2 N-Channel (Half Bridge)
FET Feature:Logic Level Gate
Drain to Source Voltage (Vdss):30V
Detailed Description:Mosfet Array 2 N-Channel (Half Bridge) 30V 5.8A, 8.2A 1W, 1.25W Surface Mount 8-SO
Current - Continuous Drain (Id) @ 25°C:5.8A, 8.2A
Base Part Number:SI4816
Email:info@cjjhk.com

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