SI4599DY-T1-GE3

Vishay Precision Group

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Part No. SI4599DY-T1-GE3
Manufacturer Vishay
Description SI4599DY-T1-GE3 Dual N/P-channel MOSFET Transistor, 4.7 A, 6.8 A, 40V, 8-Pin SOIC
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In stock 41508 pcs
Reference Price
(In US Dollars)
10 pcs100 pcs1000 pcs10000 pcs
$0.603$0.545$0.491$0.481
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Target Price:(USD)
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$0.603

Specifications

Data sheet

Vgs(th) (Max) @ Id:3V @ 250µA
Supplier Device Package:8-SO
Series:TrenchFET®
Rds On (Max) @ Id, Vgs:35.5 mOhm @ 5A, 10V
Power - Max:3W, 3.1W
Packaging:Cut Tape (CT)
Package / Case:8-SOIC (0.154", 3.90mm Width)
Other Names:SI4599DY-T1-GE3CT
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Moisture Sensitivity Level (MSL):1 (Unlimited)
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds:640pF @ 20V
Gate Charge (Qg) (Max) @ Vgs:20nC @ 10V
FET Type:N and P-Channel
FET Feature:Logic Level Gate
Drain to Source Voltage (Vdss):40V
Detailed Description:Mosfet Array N and P-Channel 40V 6.8A, 5.8A 3W, 3.1W Surface Mount 8-SO
Current - Continuous Drain (Id) @ 25°C:6.8A, 5.8A
Base Part Number:SI4599
Email:info@cjjhk.com

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