SI4564DY-T1-GE3

Vishay Precision Group

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Part No. SI4564DY-T1-GE3
Manufacturer Vishay
Description SI4564DY-T1-GE3 Dual N/P-channel MOSFET Transistor, 7.2 A, 8 A, 40 V, 8-Pin SOIC
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In stock 24172 pcs
Reference Price
(In US Dollars)
10 pcs100 pcs1000 pcs10000 pcs
$1.007$0.909$0.82$0.802
Submit a Request For Quotation on quantities greater than those displayed.
Target Price:(USD)
Quantity:
Total:
$1.007

Specifications

Data sheet

Vgs(th) (Max) @ Id:2V @ 250µA
Supplier Device Package:8-SO
Series:TrenchFET®
Rds On (Max) @ Id, Vgs:17.5 mOhm @ 8A, 10V
Power - Max:3.1W, 3.2W
Packaging:Tape & Reel (TR)
Package / Case:8-SOIC (0.154", 3.90mm Width)
Other Names:SI4564DY-T1-GE3TR
SI4564DYT1GE3
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Moisture Sensitivity Level (MSL):1 (Unlimited)
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds:855pF @ 20V
Gate Charge (Qg) (Max) @ Vgs:31nC @ 10V
FET Type:N and P-Channel
FET Feature:Logic Level Gate
Drain to Source Voltage (Vdss):40V
Detailed Description:Mosfet Array N and P-Channel 40V 10A, 9.2A 3.1W, 3.2W Surface Mount 8-SO
Current - Continuous Drain (Id) @ 25°C:10A, 9.2A
Base Part Number:SI4564
Email:info@cjjhk.com

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