SI4500BDY-T1-GE3

Vishay Precision Group

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Part No. SI4500BDY-T1-GE3
Manufacturer Vishay
Description Trans Mosfet N/p-ch 20V 6.6A/3.8A 8-PIN SOIC N T/r
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In stock 45895 pcs
Reference Price
(In US Dollars)
10 pcs100 pcs1000 pcs10000 pcs
$0.575$0.519$0.468$0.458
Submit a Request For Quotation on quantities greater than those displayed.
Target Price:(USD)
Quantity:
Total:
$0.575

Specifications

Data sheet

Vgs(th) (Max) @ Id:1.5V @ 250µA
Supplier Device Package:8-SO
Series:TrenchFET®
Rds On (Max) @ Id, Vgs:20 mOhm @ 9.1A, 4.5V
Power - Max:1.3W
Packaging:Cut Tape (CT)
Package / Case:8-SOIC (0.154", 3.90mm Width)
Other Names:SI4500BDY-T1-GE3CT
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Moisture Sensitivity Level (MSL):1 (Unlimited)
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds:-
Gate Charge (Qg) (Max) @ Vgs:17nC @ 4.5V
FET Type:N and P-Channel, Common Drain
FET Feature:Logic Level Gate
Drain to Source Voltage (Vdss):20V
Detailed Description:Mosfet Array N and P-Channel, Common Drain 20V 6.6A, 3.8A 1.3W Surface Mount 8-SO
Current - Continuous Drain (Id) @ 25°C:6.6A, 3.8A
Base Part Number:SI4500
Email:info@cjjhk.com

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