SI3590DV-T1-GE3

Vishay Precision Group

SI3590DV-T1-GE3
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Part No. SI3590DV-T1-GE3
Manufacturer Vishay
Description Mosfet N/p-ch 30V 2.5A 6-TSOP / Trans Mosfet N/p-ch 30V 2.5A/1.7A 6-PIN TSOP T/r
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In stock 50334 pcs
Reference Price
(In US Dollars)
10 pcs100 pcs1000 pcs10000 pcs
$0.533$0.481$0.434$0.424
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Target Price:(USD)
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Total:
$0.533

Specifications

Data sheet

Vgs(th) (Max) @ Id:1.5V @ 250µA
Supplier Device Package:6-TSOP
Series:TrenchFET®
Rds On (Max) @ Id, Vgs:77 mOhm @ 3A, 4.5V
Power - Max:830mW
Packaging:Cut Tape (CT)
Package / Case:SOT-23-6 Thin, TSOT-23-6
Other Names:SI3590DV-T1-GE3CT
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Moisture Sensitivity Level (MSL):1 (Unlimited)
Manufacturer Standard Lead Time:33 Weeks
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds:-
Gate Charge (Qg) (Max) @ Vgs:4.5nC @ 4.5V
FET Type:N and P-Channel
FET Feature:Logic Level Gate
Drain to Source Voltage (Vdss):30V
Detailed Description:Mosfet Array N and P-Channel 30V 2.5A, 1.7A 830mW Surface Mount 6-TSOP
Current - Continuous Drain (Id) @ 25°C:2.5A, 1.7A
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