SI3477DV-T1-GE3

Vishay Precision Group

SI3477DV-T1-GE3
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Part No. SI3477DV-T1-GE3
Manufacturer Vishay
Description SI3477DV-T1-GE3 P-channel MOSFET Transistor; 8 A; 12 V; 6-Pin TSOP
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In stock 42170 pcs
Reference Price
(In US Dollars)
10 pcs100 pcs1000 pcs10000 pcs
$0.587$0.53$0.478$0.468
Submit a Request For Quotation on quantities greater than those displayed.
Target Price:(USD)
Quantity:
Total:
$0.587

Specifications

Data sheet

Vgs(th) (Max) @ Id:1V @ 250µA
Vgs (Max):±10V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:6-TSOP
Series:TrenchFET®
Rds On (Max) @ Id, Vgs:17.5 mOhm @ 9A, 4.5V
Power Dissipation (Max):2W (Ta), 4.2W (Tc)
Packaging:Tape & Reel (TR)
Package / Case:SOT-23-6 Thin, TSOT-23-6
Other Names:SI3477DV-T1-GE3TR
SI3477DVT1GE3
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Moisture Sensitivity Level (MSL):1 (Unlimited)
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds:2600pF @ 6V
Gate Charge (Qg) (Max) @ Vgs:90nC @ 10V
FET Type:P-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):1.8V, 4.5V
Drain to Source Voltage (Vdss):12V
Detailed Description:P-Channel 12V 8A (Tc) 2W (Ta), 4.2W (Tc) Surface Mount 6-TSOP
Current - Continuous Drain (Id) @ 25°C:8A (Tc)
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