SI3460DDV-T1-GE3

Vishay Precision Group

SI3460DDV-T1-GE3
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Part No. SI3460DDV-T1-GE3
Manufacturer Vishay
Description SI3460DDV-T1-GE3 N-channel MOSFET Transistor; 7.9 A; 20 V; 6-Pin TSOP
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In stock 42905 pcs
Reference Price
(In US Dollars)
10 pcs100 pcs1000 pcs10000 pcs
$0.32$0.289$0.26$0.255
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Target Price:(USD)
Quantity:
Total:
$0.32

Specifications

Data sheet

Vgs(th) (Max) @ Id:1V @ 250µA
Vgs (Max):±8V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:6-TSOP
Series:TrenchFET®
Rds On (Max) @ Id, Vgs:28 mOhm @ 5.1A, 4.5V
Power Dissipation (Max):1.7W (Ta), 2.7W (Tc)
Packaging:Tape & Reel (TR)
Package / Case:SOT-23-6 Thin, TSOT-23-6
Other Names:SI3460DDV-T1-GE3TR
SI3460DDVT1GE3
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Moisture Sensitivity Level (MSL):1 (Unlimited)
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds:666pF @ 10V
Gate Charge (Qg) (Max) @ Vgs:18nC @ 8V
FET Type:N-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):1.8V, 4.5V
Drain to Source Voltage (Vdss):20V
Detailed Description:N-Channel 20V 7.9A (Tc) 1.7W (Ta), 2.7W (Tc) Surface Mount 6-TSOP
Current - Continuous Drain (Id) @ 25°C:7.9A (Tc)
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