SI3443DV

onsemi

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Part No. SI3443DV
Manufacturer onsemi
Description P-Channel 2.5V Specified PowerTrench? MOSFET -20V, -4A, 65m
Lead Free Status / RoHS Status Contains lead / RoHS non-compliant
In stock 41176 pcs
Reference Price
(In US Dollars)
10 pcs100 pcs1000 pcs10000 pcs
$0.394$0.355$0.321$0.314
Submit a Request For Quotation on quantities greater than those displayed.
Target Price:(USD)
Quantity:
Total:
$0.394

Specifications

Data sheet

Vgs(th) (Max) @ Id:1.5V @ 250µA
Vgs (Max):±12V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:Micro6™(TSOP-6)
Series:HEXFET®
Rds On (Max) @ Id, Vgs:65 mOhm @ 4.4A, 4.5V
Power Dissipation (Max):2W (Ta)
Packaging:Tube
Package / Case:SOT-23-6 Thin, TSOT-23-6
Other Names:*SI3443DV
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Moisture Sensitivity Level (MSL):1 (Unlimited)
Lead Free Status / RoHS Status:Contains lead / RoHS non-compliant
Input Capacitance (Ciss) (Max) @ Vds:1079pF @ 10V
Gate Charge (Qg) (Max) @ Vgs:15nC @ 4.5V
FET Type:P-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):2.5V, 4.5V
Drain to Source Voltage (Vdss):20V
Detailed Description:P-Channel 20V 4.4A (Ta) 2W (Ta) Surface Mount Micro6™(TSOP-6)
Current - Continuous Drain (Id) @ 25°C:4.4A (Ta)
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