SI2369DS-T1-GE3

Vishay Precision Group

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Part No. SI2369DS-T1-GE3
Manufacturer Vishay
Description Single P-Channel 30 V 0.04 Ohm 17 nC 1.25 W Silicon SMT Mosfet SOT-23
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In stock 49576 pcs
Reference Price
(In US Dollars)
10 pcs100 pcs1000 pcs10000 pcs
$0.199$0.18$0.162$0.158
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Target Price:(USD)
Quantity:
Total:
$0.199

Specifications

Data sheet

Vgs(th) (Max) @ Id:2.5V @ 250µA
Vgs (Max):±20V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:TO-236
Series:TrenchFET®
Rds On (Max) @ Id, Vgs:29 mOhm @ 5.4A, 10V
Power Dissipation (Max):1.25W (Ta), 2.5W (Tc)
Packaging:Tape & Reel (TR)
Package / Case:TO-236-3, SC-59, SOT-23-3
Other Names:SI2369DS-T1-GE3TR
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Moisture Sensitivity Level (MSL):1 (Unlimited)
Manufacturer Standard Lead Time:32 Weeks
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds:1295pF @ 15V
Gate Charge (Qg) (Max) @ Vgs:36nC @ 10V
FET Type:P-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Drain to Source Voltage (Vdss):30V
Detailed Description:P-Channel 30V 7.6A (Tc) 1.25W (Ta), 2.5W (Tc) Surface Mount TO-236
Current - Continuous Drain (Id) @ 25°C:7.6A (Tc)
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