SI2337DS-T1-GE3

Vishay Precision Group

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Part No. SI2337DS-T1-GE3
Manufacturer Vishay
Description In a Pack of 20, P-Channel MOSFET, 1.75 A, 80 V, 3-Pin SOT-23 Vishay SI2337DS-T1-GE3
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In stock 35504 pcs
Reference Price
(In US Dollars)
10 pcs100 pcs1000 pcs10000 pcs
$0.692$0.624$0.563$0.551
Submit a Request For Quotation on quantities greater than those displayed.
Target Price:(USD)
Quantity:
Total:
$0.692

Specifications

Data sheet

Vgs(th) (Max) @ Id:4V @ 250µA
Vgs (Max):±20V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:SOT-23-3 (TO-236)
Series:TrenchFET®
Rds On (Max) @ Id, Vgs:270 mOhm @ 1.2A, 10V
Power Dissipation (Max):760mW (Ta), 2.5W (Tc)
Packaging:Tape & Reel (TR)
Package / Case:TO-236-3, SC-59, SOT-23-3
Other Names:SI2337DS-T1-GE3-ND
SI2337DS-T1-GE3TR
SI2337DST1GE3
Operating Temperature:-50°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Moisture Sensitivity Level (MSL):1 (Unlimited)
Manufacturer Standard Lead Time:33 Weeks
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds:500pF @ 40V
Gate Charge (Qg) (Max) @ Vgs:17nC @ 10V
FET Type:P-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):6V, 10V
Drain to Source Voltage (Vdss):80V
Detailed Description:P-Channel 80V 2.2A (Tc) 760mW (Ta), 2.5W (Tc) Surface Mount SOT-23-3 (TO-236)
Current - Continuous Drain (Id) @ 25°C:2.2A (Tc)
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