SI2319DDS-T1-GE3

Vishay Precision Group

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Part No. SI2319DDS-T1-GE3
Manufacturer Vishay
Description Transistor MOSFET P-CH 40V 3.6A 3-Pin SOT-23
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In stock 62371 pcs
Reference Price
(In US Dollars)
10 pcs100 pcs1000 pcs10000 pcs
$0.272$0.246$0.222$0.217
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Target Price:(USD)
Quantity:
Total:
$0.272

Specifications

Data sheet

Vgs(th) (Max) @ Id:2.5V @ 250µA
Vgs (Max):±20V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:SOT-23-3 (TO-236)
Series:TrenchFET® Gen III
Rds On (Max) @ Id, Vgs:75 mOhm @ 2.7A, 10V
Power Dissipation (Max):1W (Ta), 1.7W (Tc)
Packaging:Tape & Reel (TR)
Package / Case:TO-236-3, SC-59, SOT-23-3
Other Names:SI2319DDS-T1-GE3TR
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Moisture Sensitivity Level (MSL):1 (Unlimited)
Manufacturer Standard Lead Time:32 Weeks
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds:650pF @ 20V
Gate Charge (Qg) (Max) @ Vgs:19nC @ 10V
FET Type:P-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Drain to Source Voltage (Vdss):40V
Detailed Description:P-Channel 40V 2.7A (Ta), 3.6A (Tc) 1W (Ta), 1.7W (Tc) Surface Mount SOT-23-3 (TO-236)
Current - Continuous Drain (Id) @ 25°C:2.7A (Ta), 3.6A (Tc)
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